Thin GaS films deposited on B-doped diamond (as-grown) and on oxygen-anneal
ed B-doped diamond (O-ann.) films grown by plasma-assisted chemical vapor d
eposition (CVD) on p(+)-type Si(001) substrate were characterized by Auger
electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS). Th
e thermal evaporation of GaS single crystal is used for the deposition. Ga
and S Auger peaks are observed in the AES spectra of both GaS-deposited sam
ples. and only weak S-Auger peaks are observed in the samples post-annealed
at about 900 degrees C. XPS spectra indicate an upward band bending due to
GaS deposition and the increase in the downward band bending due to post-a
nnealing at higher temperature. C-S and C-Ga bonds an observed for GaS-depo
sited diamond films. Secondary electron emission (SEE) spectra indicate tha
t the S-terminated diamond films seem to possess positive electron affinity
(PEA) surface. (C) 2000 Elsevier Science B.V. All rights reserved.