OXYGEN-SURFACE DIFFUSION IN 3-DIMENSIONAL CU2O GROWTH ON CU(001) THIN-FILMS

By studying the growth of Cu2O islands during the initial oxidation st age of Cu(001) with in situ transmission electron microscopy, it is fo und that the dominant mechanism for the growth of three-dimensional is lands is surface diffusion of oxygen. However, there exists a non-negl igible contribution to the metal oxide growth by another mechanism, pr obably direct impingement of the oxygen atoms on the oxide island. The se results demonstrate the importance of surface conditions in oxidati on. (C) 1997 American Institute of Physics.