THE DISSOLUTION BEHAVIOR OF THE VOID DEFECTS BY HYDROGEN ANNEALING INCZOCHRALSKI-GROWN SILICON-CRYSTALS

The annihilation of grown-in defects by hydrogen annealing have been e xplained as the dissolution of oxygen precipitates, because it has bee n generally thought that grown-in defects in Czochralski silicon cryst als are gigantic oxygen precipitates. However, it is necessary to re-e xamine the mechanism of the annihilation of the defects by hydrogen an nealing, because recently it has been shown that the grown-in defects were voids of octahedral shape. In this letter, a simulation model is presented which describes the annihilation process of void defects by hydrogen annealing. (C) 1997 American Institute of Physics.