TRANSIENT ION DRIFT DETECTION OF LOW-LEVEL COPPER CONTAMINATION IN SILICON

The transient ion drift (no) method was used to measure quenched inter stitial copper concentrations in both copper plated and copper implant ed silicon. Comparison with existing literature data allows one to con clude that, contrary to the general expectation, it is possible to que nch in most of the Cu dissolved at temperatures of 600 degrees C and b elow, This result suggests that the TID technique could be an excellen t means to detect copper contamination in p-type silicon. The expected detection limit, on the order of 10(11) cm(-3), makes the method a po tentially interesting tool to use in gettering or in-diffusion barrier studies. (C) 1997 American Institute of Physics.