PROBING OF INAS ALSB DOUBLE-BARRIER HETEROSTRUCTURES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY/

Authors
WALACHOVA J ZELINKA J VANIS J CHOW DH SCHULMAN JN KARAMAZOV S CUKR M ZICH P KRAL J MCGILL TC
Citation
J. Walachova et al., PROBING OF INAS ALSB DOUBLE-BARRIER HETEROSTRUCTURES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY/, Applied physics letters, 70(26), 1997, pp. 3588-3590
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
26
Year of publication
1997
Pages
3588 - 3590
Database
ISI
SICI code
0003-6951(1997)70:26<3588:POIADH>2.0.ZU;2-R
Abstract
InAs/AlSb resonant tunneling heterostructures have been studied by bal listic electron emission spectroscopy. Current thresholds attributed t o quasibound states in the quantum well and emission over the AlSb bar riers are observed. The observed shape of thresholds is consistent wit h inelastic processes in the InAs layers of the structures, where a hi gh number of electron-hole pairs are generated. A threshold consistent with the generation of electron-hole pairs in quantum well states is observed. (C) 1997 American Institute of Physics.