FE-DOPED INGAAS INGAASP PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICESOPERATING AT 1.55 MU-M/

Authors
DEMATOS C LACORRE A LHARIDON H GOSSELIN S LAMBERT B
Citation
C. Dematos et al., FE-DOPED INGAAS INGAASP PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICESOPERATING AT 1.55 MU-M/, Applied physics letters, 70(26), 1997, pp. 3591-3593
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
26
Year of publication
1997
Pages
3591 - 3593
Database
ISI
SICI code
0003-6951(1997)70:26<3591:FIIPMD>2.0.ZU;2-H
Abstract
Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device st ructure consists of a MQW doped with Fe (10(17) cm(-3)) isolated from the doped contact by intrinsic standoff layers. The photocarriers gene rated by the pump pulse are trapped in the MQW and screen the applied electric field in the MQW. Output diffraction efficiency of 0.2% is me asured in a nondegenerate four-wave-mixing configuration and the rise time of the diffraction signal reaches 200 ns. (C) 1997 American Insti tute of Physics.