A generalized Frenkel-Kontorova model of the Ga/Si(112) dimerized overlayer system with vacancies

Authors
Xu, HB Wang, GR Chen, SG
Citation
Hb. Xu et al., A generalized Frenkel-Kontorova model of the Ga/Si(112) dimerized overlayer system with vacancies, CHIN PHYS, 9(8), 2000, pp. 611-614
Citations number
10
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS
ISSN journal
10091963 → ACNP
Volume
9
Issue
8
Year of publication
2000
Pages
611 - 614
Database
ISI
SICI code
1009-1963(200008)9:8<611:AGFMOT>2.0.ZU;2-H
Abstract
We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic p ositions in the ground states are obtained by use of the gradient method. O ur numerical results can explain the 2 x N reconstruction observed in Ga/Si (112).