Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy. An E reaction at a channel microband electrode

Citation
K. Harriman et al., Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy. An E reaction at a channel microband electrode, ELECTROCH C, 2(8), 2000, pp. 567-575
Citations number
32
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMISTRY COMMUNICATIONS
ISSN journal
13882481 → ACNP
Volume
2
Issue
8
Year of publication
2000
Pages
567 - 575
Database
ISI
SICI code
1388-2481(200008)2:8<567:AFESOC>2.0.ZU;2-X
Abstract
We extend our earlier work (K. Harriman et al., Electrochem. Commun. 2 (200 0) 150) on adaptive finite element methods for disc electrodes to the case of an E reaction mechanism to the increasingly popular channel microband el ectrode configuration. We use the standard Galerkin finite element method f or the diffusion-dominated (low-flow) case, and the streamline diffusion fi nite element method for the convection-dominated (high-flow) case. We demon strate excellent agreement with previous approximate analytical results acr oss the range of parameters of interest, on comparatively coarse meshes. (C ) 2000 Elsevier Science S.A. All rights reserved.