Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy. ECE and EC2E mechanisms at channel microband electrodes

Citation
K. Harriman et al., Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy. ECE and EC2E mechanisms at channel microband electrodes, ELECTROCH C, 2(8), 2000, pp. 576-585
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMISTRY COMMUNICATIONS
ISSN journal
13882481 → ACNP
Volume
2
Issue
8
Year of publication
2000
Pages
576 - 585
Database
ISI
SICI code
1388-2481(200008)2:8<576:AFESOC>2.0.ZU;2-V
Abstract
We extend the work in the accompanying paper (K. Harriman et al., Electroch em. Commun. 2 (2000) 567) on the use of adaptive finite element methods to simulate the current for a steady state E reaction mechanism at a channel m icroband electrode to the more complex ECE mechanism, and the non-linear EC 2E mechanism. We again use the standard Galerkin approach for the diffusion dominated (low-flow) case, and the streamline diffusion finite element met hod (SDFEM) for convection-dominated (high-flow) case, and compare our resu lts with previous numerical and analytical approximations. We give a genera l discussion on the implications of our results for numerical simulation at microelectrodes. (C) 2000 Elsevier Science S.A. All rights reserved.