InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature

Authors
Park, G Shchekin, OB Huffaker, DL Deppe, DG
Citation
G. Park et al., InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature, ELECTR LETT, 36(15), 2000, pp. 1283-1284
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1283 - 1284
Database
ISI
SICI code
0013-5194(20000720)36:15<1283:IQDLWS>2.0.ZU;2-0
Abstract
Continuous-wave operation of InGaAs quantum dot lasers is studied. A very l ow threshold current of 460 mu A is achieved at 200K for a 5 mu m x 1170 mu m oxide-confined stripe laser. For a larger stripe width of 11 mu m, a thr eshold current density of 5.2A/cm(2) is demonstrated. The characteristic th reshold temperature is similar to 700K in the temperature range of 140-200K , and drops rapidly around room temperature.