Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer

Authors
Honda, S Miyake, T Ikegami, T Yagi, K Bessho, Y Hiroyama, R Shono, M Sawada, R
Citation
S. Honda et al., Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer, ELECTR LETT, 36(15), 2000, pp. 1284-1286
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1284 - 1286
Database
ISI
SICI code
0013-5194(20000720)36:15<1284:LT6NBR>2.0.ZU;2-C
Abstract
650nm band real refractive index-guided AIGaInP laser diodes with a strain- compensated MQW active layer have been successfully fabricated. A threshold current of 9mA, which is the lowest ever reported. was achieved and 5mW op eration was obtained up to 120 degrees C. These lasers have been operated f or > 3000h under 5mW at 90 degrees C.