Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 mu m wavelength range

Authors
Shau, R Ortsiefer, M Zigldrum, M Rosskopf, J Bohm, G Kohler, F Amann, MC
Citation
R. Shau et al., Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 mu m wavelength range, ELECTR LETT, 36(15), 2000, pp. 1286-1287
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1286 - 1287
Database
ISI
SICI code
0013-5194(20000720)36:15<1286:LIVSLD>2.0.ZU;2-Z
Abstract
The buried tunnel junction (BTJ) technique has successfully been used to re alise the first electrically pumped 1.83 mu m vertical-cavity surface-emitt ing lasers. Excellent CW performance with submilliamp threshold currents, d ifferential quantum efficiencies up to 26% and singlemode operation has bee n achieved.