Visible sub-60-femtosecond dye laser with GaAs based semiconductor saturable absorber mirror

Authors
Noh, YC Lim, YS Lee, JH Chang, JS
Citation
Yc. Noh et al., Visible sub-60-femtosecond dye laser with GaAs based semiconductor saturable absorber mirror, ELECTR LETT, 36(15), 2000, pp. 1288-1290
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1288 - 1290
Database
ISI
SICI code
0013-5194(20000720)36:15<1288:VSDLWG>2.0.ZU;2-C
Abstract
A GaAs based semiconductor saturable absorber mirror (SESAM) has been fabri cated using molecular beam epitaxy and applied to a hybridly modelocked Rh6 G dye laser. The generated pulse was as short as 56fs at the centre wavelen gth of 580nm, which shows the shortest centre wavelength in these kinds of dye laser.