Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer

Authors
Chiu, HC Chien, FT Yang, SC Kuo, CW Chan, YJ
Citation
Hc. Chiu et al., Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer, ELECTR LETT, 36(15), 2000, pp. 1320-1322
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1320 - 1322
Database
ISI
SICI code
0013-5194(20000720)36:15<1320:RSADRI>2.0.ZU;2-U
Abstract
InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power perfo rmances. These performances can be improved by inserting a delta-doping lay er on top of the undoped Schottky layer, which can reduce the ohmic contact resistances of DCFETs.