Single electron memory characteristic of silicon nanodot nanowire transistor

The authors have successfully fabricated an Si nanodot nanowire memory tran sistor using an inorganic Sig EB resist process for the formation of a 15nm wide Si nanowire and an RTO process of an ultra-thin a-Si:H film for the u ltra-small Si nanodot Formation. In the fabricated Si nanodevice. a very la rge single electron charging effect, i.e. Delta V-th of 0.72V, is experimen tally observed, and Delta V-th, of 2.2V at .3 electrons is confirmed at roo m temperature. The developed technology may be useful for opening the way t owards future Si nanodevices.