Variation in intrinsic parameters of transistor with gate width

Authors
Ariaudo, M Bourdel, E Pasquet, D
Citation
M. Ariaudo et al., Variation in intrinsic parameters of transistor with gate width, ELECTR LETT, 36(15), 2000, pp. 1323-1325
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
15
Year of publication
2000
Pages
1323 - 1325
Database
ISI
SICI code
0013-5194(20000720)36:15<1323:VIIPOT>2.0.ZU;2-G
Abstract
A method is developed that allows the intrinsic parameters of a transistor with a wide gate to be evaluated, taking the effects of propagation into ac count. It is shown that these parameters are not linearly related to the ga te width. The proposed method provides a new transistor model that can be i mplemented in a circuit simulation.