Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9-Bi3TiNbO9 thin films

We have used Raman spectroscopy to investigate thin films of ferroelectric (SrBi2Ta2O9)(x)(Bi3TiNbO9)(1-x) layered structures and to compare them with the corresponding bulk materials. Various compositions, with x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, were prepared by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. A topographic micro-Raman study reve aled very homogeneous films at each composition. The Raman spectrum of x = 0.0 film shows bands around 170, 232, 337, 522, 608, 677 and 832 cm(-1). wh ich indicates Bi3TiNbO9 formation. The evolution of the Raman bands with th e cm inclusion of SBT material shows frequency shifts and a broadening of t he bands due to the differences in mass between Sr acid Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. A lower degree of crystallization was fo und in the films compared to the bulk due to the presence of stress in the films. Strong contributions from defects were also observed in the temperat ure-dependent Raman spectra.