Thin film BaxSr1-xTiO3 Ku- and K-band phase shifters grown on MgO substrates

We report measurements of gold circuits fabricated on four BaxSr1-xTiO3 Fer roelectric films doped with 1% Mn grown on MgO substrates by laser ablation . Low frequency (1 MHz) measurements of epsilon(r) and tan delta on interdi gital capacitors are compared with high frequency measurements of phase shi ft and insertion loss on coupled microstrip phase shifters patterned onto t he same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed with amorphous buffer layer and una nnealed Films are compared. Room temperature figures of merit of phase shif t per insertion loss of up to 58.4 degrees/dB at 18 GHz and 400 V de bias w ere measured.