High density ferroelectric memories: Materials, processing and scaling

A review is presented of approaches to integrate thin film Pb(Zr,Ti)O-3-bas ed ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials is sues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attent ion in this paper is on the use of conducting perovskite oxide electrodes t o contact the ferroelectric thin film. The second part of this review focus es on some novel materials that we have investigated for use as diffusion b arriers. Finally, we present data on the scaling of ferroelectric propertie s with lateral dimensions of the capacitor.