Vertical Bridgman growth and morphology study of Ga1-xFexSb, a new dilutedmagnetic semiconductor

We report on the growth of Ga1-xFexSb, a new diluted magnetic semiconductor by the Bridgman method. XRD studies and the observed change of the lattice parameter with x (0.0001<x<0.0075) confirmed the formation of the material . A scanning electron microscopy study was done to understand the growth pr ofile of this material. The change in morphology of the wafers from differe nt parts of the ingot is shown. The type of defects and defect density indi cates growth process deficiencies. On the basis of these results the desira ble parameters for better crystal growth are presented. SEM results also sh owed the upper limit of iron substitution in GaSb using equilibrium growth methods. The cause of low iron incorporation in GaSb has been interpreted. (C) 2000 Elsevier Science S.A. All rights reserved.