Molecular beam epitaxy growth and characterisation of (AlGa)InP using GaP as a phosphorus source

Authors
Najda, SP Kean, AH
Citation
Sp. Najda et Ah. Kean, Molecular beam epitaxy growth and characterisation of (AlGa)InP using GaP as a phosphorus source, J CRYST GR, 217(4), 2000, pp. 345-348
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
217
Issue
4
Year of publication
2000
Pages
345 - 348
Database
ISI
SICI code
0022-0248(200008)217:4<345:MBEGAC>2.0.ZU;2-Y
Abstract
(Al,Ga,In)P is grown by molecular beam epitaxy using gallium phosphide (GaP ) as a source of phosphorus. Photoluminescence from the phosphide material is compared to material using phosphine as the phosphorus source. High qual ity, disordered (AI,Ga,In)P can be grown using GaP, but additional impuriti es are observed in phosphide material grown by the GaP cell as compared to gas source material. (C) 2000 Elsevier Science B.V. All rights reserved.