Segregation of Ga in Ge and InSb in GaSb

Authors
Dutta, PS Ostrogorsky, AG
Citation
Ps. Dutta et Ag. Ostrogorsky, Segregation of Ga in Ge and InSb in GaSb, J CRYST GR, 217(4), 2000, pp. 360-365
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
217
Issue
4
Year of publication
2000
Pages
360 - 365
Database
ISI
SICI code
0022-0248(200008)217:4<360:SOGIGA>2.0.ZU;2-H
Abstract
Axial and radial segregation of (i) Ga in; Ge and (ii) InSb in GaSb has bee n evaluated in crystals grown by the submerged heater method. The values of diffusion coefficients obtained by fitting the Tiller's equation to the in itial transients in composition are significantly lower than the values in the literature, obtained by using shear cells with capillaries. (C) 2000 El sevier Science B.V. All rights reserved.