Metalorganic chemical vapor deposition of nickel films from Ni(C5H5)(2)/H-2

Nickel thin films were deposited with Ni(C5H5)(2) [NiCp2, bis(cyclopentadie nyl)nickel, nickelocene]/H-2 at various temperatures and H-2/Ar ratios. The deposition rate, resistivity, purity, crystal structure, and surface morph ology of the nickel film were investigated. Also, thermal analysis was done to find out the dissociation characteristics of NiCp2, and Fourier transfo rm infrared spectroscopy diagnostics were carried out to study the gas phas e reaction kinetics of NiCp2. Nickel films deposited at higher temperatures (>225 degrees C) had high carbon content and high resistivity. At higher t emperatures, thermal decomposition of NiCp2 and subsequent decomposition of Cp induced a large amount of carbon incorporation into the film. At lower temperatures (<190 degrees C), the slow dissociation of NiCp led to some ex tent of carbon incorporation in the film. Nickel films deposited at around 200 degrees C showed carbon content lower than 5% and lower resistivity bec ause of the effective dissociation of Ni-Cp and desorption of Cp from the s urface. Nickel films deposited with hydrogen addition showed higher purity, crystallinity, and lower resistivity due to the removal of the carbon on t he surface.