Characterization of photoinduced electron tunneling in gold/SAM/Q-CdSe systems by time-resolved photoelectrochemistry

Citation
Epam. Bakkers et al., Characterization of photoinduced electron tunneling in gold/SAM/Q-CdSe systems by time-resolved photoelectrochemistry, J PHYS CH B, 104(31), 2000, pp. 7266-7272
Citations number
58
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
104
Issue
31
Year of publication
2000
Pages
7266 - 7272
Database
ISI
SICI code
1520-6106(20000810)104:31<7266:COPETI>2.0.ZU;2-5
Abstract
Colloidal CdSe quantum dots were chemisorbed on a gold electrode using a va riety of self-assembled monolayers (SAMs) consisting of dithiols and rigid disulfides. After absorption of a photon with an energy larger than the ban d gap, a long-lived excited state is formed in the quantum dot; this state can decay by electron tunneling via the gold. The rate of photoinduced tunn eling was measured directly by intensity-modulated photocurrent spectroscop y (IMPS), and its distance dependence was studied using rigid SAMs separati ng the Q-CdSe and Au. The tunneling rate was found to depend exponentially on the distance, with a decay length of 2 Angstrom.