Semiconductor-metal transition in liquid As-Te mixtures

Citation
H. Endo et al., Semiconductor-metal transition in liquid As-Te mixtures, J PHYS-COND, 12(28), 2000, pp. 6077-6099
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
28
Year of publication
2000
Pages
6077 - 6099
Database
ISI
SICI code
0953-8984(20000717)12:28<6077:STILAM>2.0.ZU;2-B
Abstract
EXAFS, conductivity and Hall coefficient measurements have been carried out for liquid As-Te mixtures. EXAFS analysis reveals the presence of chemical disorder marked by the existence of homopolar As-As and Te-Te pairs. At hi gh temperature around 500 degrees C the network structure composed of three fold coordinated As atoms and twofold coordinated Te atoms is transformed i nto the twofold chain structure. The network-chain transformation is accomp anied by the gradual semiconductor to metal transition which is demonstrate d by the results for conductivity and Hall coefficient. The microscopic ori gin of the semiconductor to metal transition is discussed in connection wit h the structural modification.