Thermal conductivity of beta-Si3N4: II, effect of lattice oxygen

Citation
M. Kitayama et al., Thermal conductivity of beta-Si3N4: II, effect of lattice oxygen, J AM CERAM, 83(8), 2000, pp. 1985-1992
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
83
Issue
8
Year of publication
2000
Pages
1985 - 1992
Database
ISI
SICI code
0002-7820(200008)83:8<1985:TCOBIE>2.0.ZU;2-9
Abstract
Dense beta-Si3N4 with various Y2O3/SiO2 additive ratios were fabricated by hot pressing and subsequent annealing, The thermal conductivity of the sint ered bodies increased as the Y2O3/SiO2 ratio increased. The oxygen contents in the beta-Si3N4 crystal lattice of these samples were determined using h ot-gas extraction and electron spill resonance techniques. A good correlati on between the lattice oxygen content and the thermal resistivity was obser ved. The relationship between the microstructure, grain-boundary phase, lat tice oxygen content, and thermal conductivity of beta-Si3N4 that was sinter ed at various Y2O3/SiO2 additive ratios has been clarified.