Thin, hydrogen-free 3C-SiC films were grown on (001) silicon substrates at
rather low temperatures by C-60-carbonization under simultaneous silicon co
-deposition at different rates. Fullerene molecules and silicon were evapor
ated from Knudsen cells. The dependence of the structure and phase composit
ion on Si rate and working pressure has been examined. Optimum growth condi
tions for the resulting SiC films are examined. Elastic recoil detection an
alysis spectra show the formation of a stoichiometric SiC layer under all c
onditions applied. X-Ray diffraction measurements reveal that the resulting
3C-SiC films, obtained under optimized conditions, are free of twin struct
ures and epitaxially aligned to the underlying silicon substrate. Cross-sec
tion transmission electron microscopy confirms a significant structural imp
rovement as Si is co-deposited. For samples formed without Si co-deposition
, pits of pyramidal shape were found in the silicon substrate near the SiC/
Si interface by scanning electron microscopy. Silicon co-evaporation during
carbonization leads to a significant reduction of the pit size. (C) 2000 E
lsevier Science S.A. All rights reserved.