Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy

Citation
K. Volz et al., Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy, MAT SCI E A, 289(1-2), 2000, pp. 255-264
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
289
Issue
1-2
Year of publication
2000
Pages
255 - 264
Database
ISI
SICI code
0921-5093(20000930)289:1-2<255:HGO3O(>2.0.ZU;2-D
Abstract
Thin, hydrogen-free 3C-SiC films were grown on (001) silicon substrates at rather low temperatures by C-60-carbonization under simultaneous silicon co -deposition at different rates. Fullerene molecules and silicon were evapor ated from Knudsen cells. The dependence of the structure and phase composit ion on Si rate and working pressure has been examined. Optimum growth condi tions for the resulting SiC films are examined. Elastic recoil detection an alysis spectra show the formation of a stoichiometric SiC layer under all c onditions applied. X-Ray diffraction measurements reveal that the resulting 3C-SiC films, obtained under optimized conditions, are free of twin struct ures and epitaxially aligned to the underlying silicon substrate. Cross-sec tion transmission electron microscopy confirms a significant structural imp rovement as Si is co-deposited. For samples formed without Si co-deposition , pits of pyramidal shape were found in the silicon substrate near the SiC/ Si interface by scanning electron microscopy. Silicon co-evaporation during carbonization leads to a significant reduction of the pit size. (C) 2000 E lsevier Science S.A. All rights reserved.