Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafers

Authors
Piotrowski, T Jung, W
Citation
T. Piotrowski et W. Jung, Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafers, MAT SCI E A, 288(2), 2000, pp. 200-204
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
288
Issue
2
Year of publication
2000
Pages
200 - 204
Database
ISI
SICI code
0921-5093(20000915)288:2<200:IOISOC>2.0.ZU;2-B
Abstract
The influence of intrinsic stress in silicon wafers during the Czochralski crystal growth process and during technological processing of semiconductor devices on defect distribution and yield was investigated. The determinati on method of intrinsic defect distribution by applying subtle flatness meas urements (GFLT parameter) is proposed. Results of measurements are compared with calculated stress distributions. Defect density distributions measure d on wafers subjected to technological processes are related to intrinsic s tress distributions and electrical parameters of semiconductor devices. (C) 2000 Elsevier Science S.A. All rights reserved.