X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon

The paper reports data on the kinetics of anodic oxide films growth on sili con in aqueous solutions of phosphoric acids as well as a study of the morp hology of the oxides grown in a special regime of the oscillating anodic po tential. X-ray reflectivity measurements were performed on the samples of a nodic oxides using an intense synchrotron radiation source. They have a mul tilayer structure as revealed by theoretical fitting of the reflectivity da ta. The oscillations of the anodic potential are explained in terms of sync hronized oxidation/dissolution reactions at the silicon surface and accumul ation of mechanical stress in the oxide film. (C) 2000 Elsevier Science S.A . All rights reserved.