Radiation damage and annealing behavior of 2.0 MeV Er-160(+) implanted silicon

Radiation damage and annealing behavior of Si (100) implanted with 2 MeV Er + ions with various doses have been investigated using Rutherford backscatt ering spectrometry and channelling (RBS/C) technique. The damage profile of silicon substrate induced by 2.0 MeV E+, at a dose of 1 x 10(14) ions cm(- 2) was extracted using the multiple-scattering dechannelling model of Feldm an, and the result is in good agreement with the TRIM96 calculation. The ex perimental results show that the annealing behavior of 2.0 MeV Er+ implante d into silicon is strongly influenced by the implantation dose and annealin g temperature. For the samples with dose of 5 x 10(14) ions cm(-2) and more , an abnormal annealing behavior was found and a qualitative explanation ha s been given. (C) 2000 Elsevier Science S.A. All rights reserved.