Radiation damage and annealing behavior of Si (100) implanted with 2 MeV Er
+ ions with various doses have been investigated using Rutherford backscatt
ering spectrometry and channelling (RBS/C) technique. The damage profile of
silicon substrate induced by 2.0 MeV E+, at a dose of 1 x 10(14) ions cm(-
2) was extracted using the multiple-scattering dechannelling model of Feldm
an, and the result is in good agreement with the TRIM96 calculation. The ex
perimental results show that the annealing behavior of 2.0 MeV Er+ implante
d into silicon is strongly influenced by the implantation dose and annealin
g temperature. For the samples with dose of 5 x 10(14) ions cm(-2) and more
, an abnormal annealing behavior was found and a qualitative explanation ha
s been given. (C) 2000 Elsevier Science S.A. All rights reserved.