Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

The crystal perfection in GaP film grown on GaAs by atmospheric pressure me talorganic vapor phase epitaxy has been studied by the use of double crysta l X-ray diffraction, backscattering spectrometry and Raman scattering techn iques. By means of the morphology and full-width at half maximum of X-ray d iffraction peak for the GaP epilayers, the growth temperature and V/III rat io were optimized. In the temperature range from 720 to 800 degrees C and w ith the V/III ratio range from 10 to 80, it was concluded that the optimum growth temperature was 800 degrees C with a V/III ratio of approximately 15 . The result of backscattering spectrometry revealed that the minimum yield for the GaP epilayer grown under nearly optimized growth conditions exceed ed that for a perfect crystal. In addition, the residual strain of GaP epil ayer was calculated by using a biaxial stress model and Raman scattering me asurement. (C) 2000 Elsevier Science S.A. All rights reserved.