Memory effect and its switching by electric field in solid-state gas sensors

Authors
Vasiliev, RB Rumyantseva, MN Ryabova, LI Akimov, BA Labeau, M Langlet, M Gaskov, AM
Citation
Rb. Vasiliev et al., Memory effect and its switching by electric field in solid-state gas sensors, MAT SCI E B, 77(1), 2000, pp. 106-109
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
77
Issue
1
Year of publication
2000
Pages
106 - 109
Database
ISI
SICI code
0921-5107(20000807)77:1<106:MEAISB>2.0.ZU;2-Y
Abstract
The Au/n-SnO2/SiO/p-Si/Al heterostructures were grown using aerosol-gel and spray pyrolysis methods. The effect of capacitance memory was discovered i n the presence of polar gas molecules: C2H5OH, NH3, H2O. The mechanism of g as sensitivity, capacitance memory and its switching was associated with th e process taking place on the SnO2/SiO2 interface. (C) 2000 Elsevier Scienc e S.A. All rights reserved.