CD dispersion across the lens field: Influence on transistor characteristics

Authors
Toublan, O Schiavone, P Gwoziecki, R Boutin, D
Citation
O. Toublan et al., CD dispersion across the lens field: Influence on transistor characteristics, MICROEL ENG, 53(1-4), 2000, pp. 91-94
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
91 - 94
Database
ISI
SICI code
0167-9317(200006)53:1-4<91:CDATLF>2.0.ZU;2-B
Abstract
In this study, the lens plus mask contribution to the Critical Dimension (C D) dispersion across the lens field is investigated by Electrical Linewidth Measurements (ELM) at the gate level. It is shown that these CD dispersions are an important contributor to the t ransistor characteristic dispersion observed on the wafer. By using this te chnique, stepper qualification can be performed more precisely. We also sho w that electrical linewidth measurements can be used in a lens characteriza tion procedure.