Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography

The absorption spectra in the vacuum ultraviolet region of the spectrum fro m 140 to 200 nm, of various Si-based polymers and polymeric materials with aliphatic and aromatic structure for 157nm lithographic applications are di scussed in this paper. Si- based polymers seem to have the right value of a bsorbance at 157nm. Therefore they can be imaged at the usual bilayer thick ness of 0.1 mu m. Mass spectroscopic and outgasing studies at 157nm suggest that a complete bond breaking of the aromatic and linear carbon chains is taking place even at low values of the laser energy.