Optical proximity correction by grey tone photolithography

Authors
Cui, Z Du, JL Huang, QZ Su, JQ Guo, YK
Citation
Z. Cui et al., Optical proximity correction by grey tone photolithography, MICROEL ENG, 53(1-4), 2000, pp. 153-156
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
153 - 156
Database
ISI
SICI code
0167-9317(200006)53:1-4<153:OPCBGT>2.0.ZU;2-M
Abstract
A new approach to optical proximity correction in VLSI photolithography has been proposed. Instead of changing feature dimension or adding serifs, the mask feature itself has been coded in different grey tone levels at differ ent parts of the feature, based on the analysis of aerial image. Improvemen t on proximity effect is demonstrated by computer simulation and confirmed by experiment.