Fabrication of single electron devices by hybrid (E-beam/DUV) lithography

Authors
Palun, L Tedesco, S Heitzman, M Martin, F Fraboulet, D Dal'zotto, B Nier, ME Mur, P Charvolin, T Mariolle, D Tardif, F
Citation
L. Palun et al., Fabrication of single electron devices by hybrid (E-beam/DUV) lithography, MICROEL ENG, 53(1-4), 2000, pp. 167-170
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
167 - 170
Database
ISI
SICI code
0167-9317(200006)53:1-4<167:FOSEDB>2.0.ZU;2-M
Abstract
This paper describes the successive fabrication steps on 8 " wafers of a si licon Single Electron Transistor (SET) using hybrid (e-beam/DUV) lithograph y. This process is compatible with Silicon On Insulator MOSFET technology, and opens a way to fabrication with industrial tools of SET devices potenti ally operating at room temperature.