Capacitively- and resistively-coupled single-electron transistor

Authors
Wakaya, F Mandai, S Nakamichi, S Iwabuchi, S Gamo, K
Citation
F. Wakaya et al., Capacitively- and resistively-coupled single-electron transistor, MICROEL ENG, 53(1-4), 2000, pp. 195-198
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
195 - 198
Database
ISI
SICI code
0167-9317(200006)53:1-4<195:CARST>2.0.ZU;2-J
Abstract
Single-electron transistor (SET) which operates as capacitively-coupled SET (C-SET) and resistively-coupled SET (R-SET) was fabricated using two-dimen sional electron gas and metal Schottky gates. The Coulomb di amends of both C-SET and R-SET were observed at similar or equal to 30 mK. The observed C oulomb diamond of R-SET is shifted along the gate-voltage axis, although it should not be shifted in the theoretical prediction.