Electron-beam lithography of V-groove quantum wire devices

We have developed electron-beam lithography methods, using multi-layer PMMA resist, in order to fabricate structures with sub-micron features on non-p lanar substrates. Using these methods, we achieved lift-off of 100 nm wide metallic gates which follow the topography of 1.5 mu m deep V-grooves. Thes e devices were used to measure electron transport properties of quantum wir es grown in V-grooves. Using such non-planar gate structures, we could obse rve 1D quantized conduction steps and investigate the phenomena of 2D/1D sc attering and quantum contact resistance in these wires.