Study of resist surface roughness in EB lithography

Citation
A. Yoshida et al., Study of resist surface roughness in EB lithography, MICROEL ENG, 53(1-4), 2000, pp. 313-316
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
313 - 316
Database
ISI
SICI code
0167-9317(200006)53:1-4<313:SORSRI>2.0.ZU;2-O
Abstract
Electron beam direct writing is one of the candidates for the semiconductor device fabrication of the 130nm node and below. However, as the pattern si ze becomes smaller, the resist surface roughness becomes the critical issue . To clarify the roughness-controlling factor, we compared the two positive tone chemically amplified (CA) EB resists. As a result, we found that the contrast of the dissolution rate and the distribution of exposed energy cau se the surface roughness of EB resists.