Electron beam direct writing is one of the candidates for the semiconductor
device fabrication of the 130nm node and below. However, as the pattern si
ze becomes smaller, the resist surface roughness becomes the critical issue
. To clarify the roughness-controlling factor, we compared the two positive
tone chemically amplified (CA) EB resists. As a result, we found that the
contrast of the dissolution rate and the distribution of exposed energy cau
se the surface roughness of EB resists.