Influence of electron acceleration voltage in the cell-projection lithography system

The electron trajectory simulation, considering the Coulomb interaction eff ect among electrons in the beam in a given electron optical system is perfo rmed. The method to obtain the resist pattern width is introduced from the results of the simulation. The variations of the line width with the defocu s, or with the exposure dose obtained by the simulation are compared with t he experimental results. Finally, the exposure pattern contrast at the wafe r surface is obtained as a combination of accelerating Voltage and the curr ent density of the electron beam by the simulation.