Quantum electron beam probe of sidewall dry-etch damage

Citation
M. Rahman et al., Quantum electron beam probe of sidewall dry-etch damage, MICROEL ENG, 53(1-4), 2000, pp. 371-374
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
371 - 374
Database
ISI
SICI code
0167-9317(200006)53:1-4<371:QEBPOS>2.0.ZU;2-1
Abstract
Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent e lectron focusing. A collimated electron beam is reflected off an internal b oundary formed by dry etching. Spectra measured in an applied magnetic fiel d are influenced strongly by increased levels of etch damage. Monte Carlo s imulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Elec trostatic calculations reveal a damage shadow beneath the sidewall.