SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

Authors
Rolland, L Peignon, MC Cardinaud, C Turban, G
Citation
L. Rolland et al., SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer, MICROEL ENG, 53(1-4), 2000, pp. 375-379
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
375 - 379
Database
ISI
SICI code
0167-9317(200006)53:1-4<375:SSIHDC>2.0.ZU;2-T
Abstract
A new high density plasma SiO2 etching process based on CHF3/CH4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectiv ity as high as 15 with respect to silicon has been obtained. Besides, a sli ght decrease of the SiO2 etch rate is observed as compared to CHF3. Deposit ion of a carbon-rich fluorocarbon layer on the SiO2 is thought to play an i mportant role in the etching mechanism, as generally described for Si.