A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

We show that a triphenylene derivative, 2,3,6,7,10,11- hexapentyl-oxytriphe nylene, acts as an electron beam resist of 10-nm resolution with high dry-e tch durability. The triphenylene derivative exhibited positive and negative behaviors depending on the dose and developers. When pentanol was used as a developer, positive behavior was observed for electron doses between simi lar to 3 x 10(-4) and similar to 1 x 10(-3) C/cm(2) at 20 keV, and at highe r doses, the resist exhibited negative behavior. When monochlorobenzene was used as a developer, only the negative behavior was observed with a sensit ivity of 2x 10(-3) C/cm(2) at 20 keV. Performance of the resists were demon strated defining 10-nm dots and lines (negative tone), and fabricating a hi gh aspect-ratio Si nanostructure with a single layer process.