Three-dimensional resist development simulation - Benchmarks and integration with lithography

We present a rigorous, three-dimensional model for the simulation of resist exposure and development. The development simulation is based on a cellula r surface movement algorithm and benchmarked for several prototypical test cases. Exposure simulation is performed by an extension of the two-dimensio nal differential method to three dimensions. This method relies on a Fourie r expansion of the electromagnetic (EM) field in the lateral coordinates. W e demonstrate simulation examples for exposure and development over a plana r substrate, a dielectric and a reflective step.