Bias printing of APSM resists for 180 nm contact holes

Authors
Teng, G Prokopowicz, G Kang, D Xu, C Thackeray, J Duong, T Orsula, G
Citation
G. Teng et al., Bias printing of APSM resists for 180 nm contact holes, MICROEL ENG, 53(1-4), 2000, pp. 457-460
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
457 - 460
Database
ISI
SICI code
0167-9317(200006)53:1-4<457:BPOARF>2.0.ZU;2-D
Abstract
This paper focuses on the use of bias printing for APSM DUV resists in patt erning 180 nm contact holes. Modeling and experimental data for three Shipl ey low temperature APSM resists are used to analyze the advantages and trad eoffs of using printing bias. Proper use of bias printing of these APSM con tact hole resists can give excellent lithographic performance at feasible p hotospeed.