Overlay performance of SR lithography in 64M DRAM layers

Citation
H. Sumitani et al., Overlay performance of SR lithography in 64M DRAM layers, MICROEL ENG, 53(1-4), 2000, pp. 587-590
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
587 - 590
Database
ISI
SICI code
0167-9317(200006)53:1-4<587:OPOSLI>2.0.ZU;2-7
Abstract
Synchrotron radiation lithography is applied to the real dynamic random acc ess memory process. Two full chip x-ray masks whose overlay accuracy is 19. 2nm (x) and 26.4nm(y) are prepared. By using Canon x-ray stepper, total ove rlay accuracy less than 45nm is obtained.