Using X-ray lithography to make sub 100 nm MMICs

Despite growing expectations of significant progress in projection lithogra phy using longer wavelengths (such as 193 nm, 157 nm, 126 nm, similar to 14 nm versus 1 nm for XRL), X-ray Lithography is still the most developed and production ready technology compared with the other NGL approaches. For th e timely introduction of this technology into the manufacturing environment the development of fully integrated X-ray lithography systems becomes very important. Reflecting manufacturing and R&D demands, the X-ray technology integration has to be pursued for both synchrotron radiation and X-ray poin t source based approaches. While the synchrotron-based approach provides th e high volume platform, the point source will provide the platform for lowe r volume production and R&D efforts. SAL recognizes the needs for both, a s ynchrotron based stepper as well as a point source stepper and is focused o n meeting those needs. In this paper, we will present our work in transferr ing Sanders MMIC manufacturing line from direct write e-beam gate definitio n to gate definition using point source X-ray lithography. Initial work has shown the process to be robust with gate lengths below 100nm.