Modeling pattern transfer in ion-beam lithography masks

In an effort to maintain pattern transfer errors in stencil mask membranes within acceptable tolerances, finite element (FE) models and techniques are being developed at the University of Wisconsin's Computational Mechanics C enter in cooperation with Ionen Mikrofabikations Systeme (IMS), Vienna. FE calculations allow for derailed studies of various design scenarios before the efforts of physical implementation are required. Critical issues such a s mask geometry, stencil pattern geometry, gravitational loading, and the S OI fabrication process can, therefore, be accurately addressed in a timely and cost-effective manner.