Development of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imaging

Citation
A. Takafuji et al., Development of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imaging, MICROEL ENG, 53(1-4), 2000, pp. 649-652
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
53
Issue
1-4
Year of publication
2000
Pages
649 - 652
Database
ISI
SICI code
0167-9317(200006)53:1-4<649:DOASDS>2.0.ZU;2-M
Abstract
Electron optics and secondary-electron (SE) detection systems that increase the speed and sensitivity of SEM imaging systems used for inspecting semic onductor devices have been developed. Direct and indirect SE detection syst ems optimized for retarding electron optics were investigated. In indirect detection, SEs are deflected to a converter electrode, and a detector colle cts the SEs generated from the electrode. Simulation of the SE trajectories showed that indirect systems are capable of stable high-efficiency SE coll ection at various retarding voltages, V-r. Indirect systems were developed and found that various V-r can be applied to a sample to achieve stable SE collection efficiency.