Room-temperature electronic phase transitions in the continuous phase diagrams of perovskite manganites

Citation
Yk. Yoo et al., Room-temperature electronic phase transitions in the continuous phase diagrams of perovskite manganites, NATURE, 406(6797), 2000, pp. 704-708
Citations number
30
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
NATURE
ISSN journal
00280836 → ACNP
Volume
406
Issue
6797
Year of publication
2000
Pages
704 - 708
Database
ISI
SICI code
0028-0836(20000817)406:6797<704:REPTIT>2.0.ZU;2-O
Abstract
Highly correlated electronic systems-such as transition-metal oxides that a re doped Mott insulators-are complex systems which exhibit puzzling phenome na, including high-temperature superconductivity and colossal magnetoresist ivity. Recent studies(1-3) suggest that in such systems collective electron ic phenomena are important, arising from long-range Coulomb interactions an d magnetic effects. The qualitative behaviour of these systems is strongly dependent on charge filling (the level of doping) and the lattice constant. Here we report a time-efficient and systematic experimental approach for s tudying the phase diagrams of condensed-matter systems. It involves the con tinuous mapping of the physical properties of epitaxial thin films of perov skite manganites (a class of doped Mott insulator) as their composition is varied. We discover evidence that suggests the presence of phase boundaries of electronic origin at room temperature.